Mfg Part Number: SYP2332 | NSN : 5962-01-241-3171 | NIIN : 012413171 |
CAGE Code : 55576 | Manufacturer: Synertek | Item Name : Microcircuit Memory |
FSC : 5962 Microcircuits Electronic |
Thank you for choosing to rely on Nascent Aviation for all your operational needs. You have reached our NSN RFQ Page where you can request quotes for our most in-demand NSN 5962-01-241-3171 parts and components with Microcircuit Memory manufactured by MFG Synertek. Some of the items we carry include part number SYP2332, and various others, those of which have been thoroughly assessed for quality and reliability. At Nascent Aviation, we set ourselves apart from other distributors in our steadfast commitment to providing guidance at every stage of the procurement process, offering rapid lead times, cost savings, and exceptional customer service
Nascent Aviation is commended for making quality the cornerstone of its operations, ensuring that our customers never have to worry about the authenticity of our products. The NSN 5962-01-241-3171 products SYP2332 that we feature by Synertek are paired alongside their corresponding CAGE Code 55576 and FSC 5962 Microcircuits Electronic More than that, the NSN items we carry are subject to a series of rigorous quality assurance measures, tests, verifications, and assessments, as applicable. If you find a product that suits your operations, we invite you to fill out and submit an RFQ form for your comparisons. Alternatively, you can call or email us directly; we are available 24/7x365!
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 230 INCHES MINIMUM AND 1 260 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 530 INCHES MINIMUM AND 0 550 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 160 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDED3-STATE OUTPUT AND WIRE-OR OUTPUTS AND HIGH PERFORMANCE AND STATIC OPERATION AND ASYNCHRONOUS |
MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY32768 |
MEMORY | CSWJ | WORD QUANTITY4096 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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