| Mfg Part Number: VQ5036 | NSN : 5961-01-347-8868 | NIIN : 013478868 |
| CAGE Code : 17856 | Manufacturer: Siliconix Incorporated Div Silic | Item Name : Semiconductor Devices Unitized |
| FSC : 5961 Semiconductor Devices and Associated Hardware |
Thank you for choosing to rely on Nascent Aviation for all your operational needs. You have reached our NSN RFQ Page where you can request quotes for our most in-demand NSN 5961-01-347-8868 parts and components with Semiconductor Devices Unitized manufactured by MFG Siliconix Incorporated Div Silic. Some of the items we carry include part number VQ5036, and various others, those of which have been thoroughly assessed for quality and reliability. At Nascent Aviation, we set ourselves apart from other distributors in our steadfast commitment to providing guidance at every stage of the procurement process, offering rapid lead times, cost savings, and exceptional customer service
Nascent Aviation is commended for making quality the cornerstone of its operations, ensuring that our customers never have to worry about the authenticity of our products. The NSN 5961-01-347-8868 products VQ5036 that we feature by Siliconix Incorporated Div Silic are paired alongside their corresponding CAGE Code 17856 and FSC 5961 Semiconductor Devices and Associated Hardware More than that, the NSN items we carry are subject to a series of rigorous quality assurance measures, tests, verifications, and assessments, as applicable. If you find a product that suits your operations, we invite you to fill out and submit an RFQ form for your comparisons. Alternatively, you can call or email us directly; we are available 24/7x365!
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-347-8868 Item Description: Semiconductor Devices Unitized | 5961 | 013478868 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Vq5036 | 0 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL" |
| ABHP | OVERALL LENGTH | 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 0.125 INCHES MINIMUM AND 0.180 INCHES MAXIMUM" |
| ABKW | OVERALL HEIGHT | 0.200 INCHES MAXIMUM" |
| ABMK | OVERALL WIDTH | 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| AGAV | END ITEM IDENTIFICATION | TSEC/KG-194" |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE 2ND TRANSISTOR AND -30.0 MAXIMUM DRAIN TO GATE VOLTAGE 2ND TRANSISTOR" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE 1ST TRANSISTOR AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE 1ST TRANSISTOR" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT 1ST TRANSISTOR AND 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT 1ST TRANSISTOR" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT 2ND TRANSISTOR AND 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR" |
| CTRD | POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PIN" |
| ZZZK | SPECIFICATION/STANDARD DATA | 98230-0N370557 MANUFACTURERS SPECIFICATION CONTROL" |
| ABBH | INCLOSURE MATERIAL | METAL" |
| ABHP | OVERALL LENGTH | 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 0.125 INCHES MINIMUM AND 0.180 INCHES MAXIMUM" |
| ABKW | OVERALL HEIGHT | 0.200 INCHES MAXIMUM" |
| ABMK | OVERALL WIDTH | 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| AGAV | END ITEM IDENTIFICATION | TSEC/KG-194" |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE 2ND TRANSISTOR AND -30.0 MAXIMUM DRAIN TO GATE VOLTAGE 2ND TRANSISTOR" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE 1ST TRANSISTOR AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE 1ST TRANSISTOR" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT 1ST TRANSISTOR AND 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT 1ST TRANSISTOR" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MINIMUM DRAIN CURRENT 2ND TRANSISTOR AND 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR" |
| CTRD | POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PIN" |
| ZZZK | SPECIFICATION/STANDARD DATA | 98230-0N370557 MANUFACTURERS SPECIFICATION CONTROL" |
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